heavily-doped


heavily-doped
высоколегированный

English-Russian dictionary of aviation and space materials . 1972.

Смотреть что такое "heavily-doped" в других словарях:

  • heavily-doped material — stipriai legiruota medžiaga statusas T sritis radioelektronika atitikmenys: angl. heavily doped material vok. hochdotiertes Material, n rus. сильнолегированный материал, m pranc. matériau fortement dopé, m …   Radioelektronikos terminų žodynas

  • heavily-doped region — stipriai legiruota sritis statusas T sritis radioelektronika atitikmenys: angl. heavily doped region vok. hochdotierter Bereich, m rus. сильнолегированная область, f pranc. région fortement dopée, f …   Radioelektronikos terminų žodynas

  • be doped up — informal be heavily under the influence of drugs. → dope …   English new terms dictionary

  • Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… …   Wikipedia

  • Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP …   Wikipedia

  • Diode — Figure 1: Closeup of a diode, showing the square shaped semiconductor crystal (black object on left) …   Wikipedia

  • semiconductor device — ▪ electronics Introduction       electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… …   Universalium

  • Doping (semiconductor) — In semiconductor production, doping intentionally introduces impurities into an extremely pure (also referred to as intrinsic) semiconductor for the purpose of modulating its electrical properties. The impurities are dependent upon the type of… …   Wikipedia

  • MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

  • Резонанс Фано — тип резонанса с асимметричным профилем, возникающего в результате интерференции двух волновых процессов. Природа интерферирующих процессов может быть самой различной, поэтому такой резонанс носит универсальный характер и появляется в различных… …   Википедия

  • Charge-coupled device — A specially developed CCD used for ultraviolet imaging in a wire bonded package. A charge coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for… …   Wikipedia

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